g5sba20, g5sba60 & G5SBA80 vishay general semiconductor document number: 88608 revision: 15-dec-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 glass passivated single-phase bridge rectifier features ? ul recognition file number e54214 ? ideal for printed circuit boards ? high surge current capability ? high case dielectric strength of 1500 v rms ? solder dip 260 c, 40 s ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications general purpose use in ac-to-dc bridge full wave rectification for monitor, tv, printer, switching mode power supply, adapter, audio equipment, and home appliances applications. mechanical data case: gbu epoxy meets ul 94 v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 e3 suffix for consumer grade, meets jesd 201 class 1a whisker test polarity: color band denotes the cathode end mounting torque: 10 cm-kg (8.8 inches-lbs) max. recommended torque: 5.7 cm-kg (5 inches-lbs) primary characteristics i f(av) 6.0 a v rrm 200 v, 600 v, 800 v i fsm 150 a i r 5 a v f 1.05 v t j max. 150 c case style gbu notes: (1) unit case mounted on aluminum plate heatsink (2) units mounted on p.c.b with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length maximum ratings (t a = 25 c unless otherwise noted) parameter symbol g5sba20 g5sba60 G5SBA80 unit maximum repetive peak reverse voltage v rrm 200 600 800 v maximum rms reverse voltage v rwm 140 420 560 v maximum dc blocking voltage v dc 200 600 800 v maximum average forward rectified output current at t c = 100 c (1) t a = 25 c (2) i f(av) 6.0 2.8 a peak forward surge current single sine-wave superimposed on rated load i fsm 150 a rating for fusing (t < 8.3 ms) i 2 t93a 2 s operating junction and storage temperature range t j, t stg - 55 to + 150 c
g5sba20, g5sba60 & G5SBA80 vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88608 revision: 15-dec-08 2 notes: (1) unit case mounted on aluminum plate heatsink (2) units mounted on p.c.b with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol g5sba20 g5sba60 G5SBA80 unit maximum instantaneous forward voltage per diode 3.0 a v f 1.05 v maximum dc reverse current at rated dc blocking voltage per diode t j = 25 c t j = 125 c i r 5.0 300 a thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol g5sba20 g5sba60 G5SBA80 unit typical thermal resistance r ja (2) r jc (1) 22 3.4 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode g5sba60-e3/45 3.565 45 20 tube g5sba60-e3/51 3.565 51 250 paper tray figure 1. derating curve output rectified current 0 50 100 150 0 2.0 4.0 6.0 8 .0 a v erage for w ard o u tp u t c u rrent (a) temperat u re (c) heatsink mo u nting, t c p.c.b. mo u nting, t a figure 2. maximum non-repetitive peak forward surge current per diode 1 10 100 0 50 100 150 t j = t j max. single sine- w a v e nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) 1.0 cycle
g5sba20, g5sba60 & G5SBA80 vishay general semiconductor document number: 88608 revision: 15-dec-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical instantaneous forw ard characteristics per diode figure 4. typical reverse leak age characteristics per diode 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 100 instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) t j = 25 c p u lse w idth = 300 s 1 % d u ty cycle 0 20 40 60 8 0 100 0.01 0.1 1 10 100 1000 percent of rated peak re v erse v oltage (%) instantaneo u s re v erse c u rrent ( a) t j = 125 c t j = 25 c figure 5. typical juncti on capacitance per diode figure 6. typical transient thermal impedance 0.1 1 10 100 10 100 1000 re v erse v oltage ( v ) j u nction capaci tance (pf) t j = 25 c f = 1.0 mhz v sig = 50 m v p-p 0.01 0.1 1 10 100 0.1 1 10 100 t - heating time (s) transient thermal impedance (c/ w ) case type gbu polarity sho w n on front side of case, positi v e lead b y b e v eled corner 0.125 (3.2) x 45 chamfer 0.0 8 5 (2.16) 0.065 (1.65) 0.020 r (typ.) 0. 88 0 (22.3) 0. 8 60 (21. 8 ) 0.160 (4.1) 0.140 (3.5) 0.075 (1.9) r . 0.0 8 0 (2.03) 0.060 (1.52) 0.050 (1.27) 0.040 (1.02) 0.0 8 0 (2.03) 0.065 (1.65) 0.210 (5.33) 0.190 (4. 8 3) 0.140 (3.56) 0.130 (3.30) 9 typ. 5 typ. 0.0 8 5 (2.16) 0.075 (1.90) 0.026 (0.66) 0.020 (0.51) 0.310 (7.9) 0.290 (7.4) 0.740 (1 8 . 8 ) 0.720 (1 8 .3) 0.710 (1 8 .0) 0.690 (17.5) 0.100 (2.54) 0.0 8 5 (2.16)
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